| 摘要 |
<p>PCT No. PCT/DE93/00824 Sec. 371 Date Jul. 8, 1996 Sec. 102(e) Date Jul. 8, 1996 PCT Filed Sep. 8, 1993 PCT Pub. No. WO95/07570 PCT Pub. Date Mar. 16, 1995A device for limiting overload currents by means of a semiconductor element with at least one controllable semiconductor having an electron source (source), an electron acceptor (drain) and a control electrode (gate) controlling the electron flow, which device has characteristic curves typical of a field-effect transistor (FET). In the case of alternating voltage, two FETs are connected in series, in complementary fashion. Means are provided for internally obtaining the control voltage required for driving the semiconductor element from at least part of the load current and/or from at least part of the voltage drop across the semiconductor element.</p> |
