发明名称 Wideband double C-patch antenna including gap-coupled parasitic elements
摘要 A wide bandwidth, shorted, dual C-patch antenna includes a truncated ground plane, a layer of dielectric material having a first surface overlying the ground plane and an opposing second surface, and an electrically conductive layer overlying the second opposing surface of the dielectric layer. The electrically conductive layer is differentiated into a plurality of antenna elements including a driven antenna element and at least one non-driven, parasitic antenna element. Each of the antenna elements is in the shape of a parallelogram and has one of a rectangular and a non-rectangular (e.g., parabolic, triangular, pentagonal) aperture having a length that extends along a first edge of the electrically conductive layer and a width that extends towards an oppositely disposed second edge. The length has a value that is equal to approximately 20% to approximately 35% of a length of the first edge. The antenna may further include electrically conductive vias or feedthroughs for shorting the electrically conductive layer to the ground plane at a region adjacent to a third edge of the electrically conductive layer. The wide bandwidth antenna may be curved about one or more axes.
申请公布号 US5627550(A) 申请公布日期 1997.05.06
申请号 US19950490641 申请日期 1995.06.15
申请人 NOKIA MOBILE PHONES LTD. 发明人 SANAD, MOHAMED
分类号 H01Q21/08;H01Q1/22;H01Q1/24;H01Q9/04;H01Q13/10;H01Q19/00;(IPC1-7):H01Q1/38 主分类号 H01Q21/08
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