发明名称 PHASE SHIFT MASK AND ALIGNER
摘要 PROBLEM TO BE SOLVED: To make a contribution to an improvement in production yield, etc., by making it possible correct the phase error occurring in the nonuniformity in the film thickness of a phase shift material. SOLUTION: This mask is so constituted that phase shift members 2 translucent to exposure light are selectively formed on a substrate 1 transparent to the exposure light. In such a case, differences in level are formed on the surface of the substrate 1 so as to decrease the differences in the focal positions in the imaging of the parts formed with the phase shift members 2 and the parts not formed with these members according to the deviation from 180 deg. in the regions (peripheral regions of the mask) where the phase difference between the exposure light transmitted through the phase shift members 2 and the exposure light passing the parts not formed with the phase shift members 2 deviates from 180 deg. with respect to the region (central region of the mask) where the phase difference between the exposure light transmitted through the phase shift members 2 and the exposure light passing the parts not formed with the phase shift members 2 is 180 deg..
申请公布号 JPH09120155(A) 申请公布日期 1997.05.06
申请号 JP19960179299 申请日期 1996.07.09
申请人 TOSHIBA CORP 发明人 FUJISAWA TADAHITO;INOUE SOICHI;KAWANO KENJI
分类号 G03F1/30;G03F1/32;G03F1/60;G03F1/68;G03F7/20;H01L21/027 主分类号 G03F1/30
代理机构 代理人
主权项
地址