| 摘要 |
<p>PROBLEM TO BE SOLVED: To support a wafer with an electrostatic chuck assembly while the wafer is treated by incorporating a supporting main body having a supporting surface which holds the wafer, a voltage source which is coupled with the supporting main body so as to electrostatic couple the wafer with the supporting surface, and a cooling system which cools the wafer in the assembly. SOLUTION: An electrostatic supporting system, namely, a chuck assembly 10 is incorporated with a supporting surface which holds a wafer 6 and a plurality of arm members 16A and 16B extended outward from a supporting main body 12 so as to fit the main body 12 to a treatment chamber. The assembly 10 is also provided with a voltage source 42 couplet with the supporting surface so as to electrostatically couple the wafer 6 with the supporting surface and a cooling system (channel) 30 which cools the wafer 6. The channel is provided with a peseous base material source and a plurality of gas dispersing grooves formed on the supporting surface in meandering states and uniformly cools the wafer 6. Therefore, the flow of a process gas can be made uniform around the wafer 6 by supporting the wafer 6 under a low pressure while the wafer 6 is treated.</p> |
