| 摘要 |
A method of fabricating a fine structured silicon stopper using double diffusion includes an oxidation step of growing an oxide layer 2 on an n-type substrate 1, a first diffusion step of forming a window in the oxide layer and forming two separate first n+ diffusion regions 3 through the first selective diffusion according to impurity implantation, a second diffusion step of removing the oxide layer, defining the region between the two first diffusion regions with an oxide layer 2" and performing the second selective diffusion to form a second n+ diffusion region 4 for a stopper, having a depth of 0.5-5 m, an epitaxial layer growing step of removing the oxide layer 2" and growing an n-type epitaxial layer 5 on the overall surface of the substrate, an anode reaction step of selectively etching the n-type epitaxial layer, leaving only a bridge-type fine structure, to expose the n+ diffusion region and carrying out anode reaction to make the first and second n+ diffusion regions 3 and 4 into a porous silicon layer 6, and an etching step of etching the porous silicon layer using an etchant to form the fine structure.
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