| 发明名称 |
High efficiency n-channel charge pump |
| 摘要 |
A high efficiency charge pump for low and wide voltage ranges. The charge pump includes main and secondary charge pumps, the secondary charge pump (10) is employed to avoid the VtN drop that the main charge pump exhibits. The secondary charge pump (10) allows the main charge pump to pump to a theoretical maximum of 2VCC, while maintaining an efficiency close to 40%. <IMAGE> |
| 申请公布号 |
EP0594230(B1) |
申请公布日期 |
1997.05.02 |
| 申请号 |
EP19930202505 |
申请日期 |
1993.08.26 |
| 申请人 |
UNITED MEMORIES, INC.;NIPPON STEEL SEMICONDUCTOR CORPORATION |
发明人 |
CORDOBA, MICHAEL V.;HARDEE, KIM C. |
| 分类号 |
G11C11/407;G11C5/14;G11C16/06;G11C17/00;H02M3/07;H03K19/094;(IPC1-7):H02M3/07;H03L1/00;G05F3/16;H02M3/10;H03L5/00;H03K5/135;H03K5/02 |
主分类号 |
G11C11/407 |
| 代理机构 |
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