LASER ANNEALING METHOD AND LASER ANNEALING APPARATUS FOR THIN FILM SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To reduce a time for a treatment and utilize a laser beam efficiently. SOLUTION: The recessed stripe trenches on the beam reflective plane of a totally reflective mirror 5 are inclined from the direction of the light axis (a) of a laser beam 4 by an angle of 45 deg.. As the beam reflective plane can reflect the laser beam 4 as stripe-shaped reflected lights 9 toward the row of a TFT part 7, if the laser beam 4 is applied, the stripe-shaped reflected lights 9 are securely applied to the respective pixels in the longitudinal row of the TFT part 7. As a result, it is not necessary to scan a substrate, etc., and a time for the treatment can be reduced without fail and, further, as it is not necessary to apply the laser beam to the whole surface of a substrate, the laser beam can be utilized efficiently.