| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, such as the semiconductor light emitting device, etc., having excellent characteristics, high reliability, and a long service life. SOLUTION: In a semiconductor light emitting device using a II-VI group compound semiconductor, a p-type Znx Cd1-x Sey Te1-y (0<=x<=1.0, 0<=y<=0.875) layer 4 is provided as a metal diffusing and/or crystal-defect propagation preventing layer in a p-type ZnTe contact layer 3 on which a p-side electrode 5 is formed. A p-type ZnSe layer or p-type Znx Cd1-x Sy Te1-y (0<=x<=1.0, 0<=y<=0.58) layer can be used as the metal diffusing and/or crystal-defect propagation preventing layer 4. In addition, in a semiconductor light emitting device using a GaN-based III-V group compound semiconductor, for example, a p-type GaN/AlGaN super lattice layer is provided as the metal diffusing and/or crystal- defect propagation preventing layer in a GaN layer on which the p-side electrode is provided. |
