| 摘要 |
PROBLEM TO BE SOLVED: To prevent imperfect wire bonding, by completely eliminating a semiconductor thin film below an electrode which is to be bonded to a semiconductor thin film having a specific thinckness which is epitaxially grown on an insulating substrate and turned into a magnetosensitive layer. SOLUTION: An InAs thin film 4 of 0.5 (preferably 0.2-1.4)μm in thickness doped with Si is epitaxially grown on a semiinsulating GaAs substrate 5. In order to eliminate an InAs/GaAs interface modified layer 11 below an electrode which is to be bonded to the film 4, a necessary resist pattern is formed. By using it as a mask, etching is performed 0.7μm from the surface where copper (II) chloride, chlorine based etchant is used. Thereby the InAs/GaAs interface modified layer is eliminated. The cause of imperfect wire bonding is in the modified layer 11 having crystal defects which have generated mutual diffusion of the InAs/GaAs hetero epitaxial growth interface of a lower electrode to be wire-bonded. By eliminating the modified layer 11, generation of failure can be prevented.
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