Method of making semiconductor wafers.

摘要

A method for a flatter semiconductor wafer free of ORP -observed irregularity and particles generated in handling on the back side of the wafer, in which an alkaline etching is adopted to utilize its advantage and a slight polishing step is combined to a conventional method of this kind. A deficiency of alkaline etching which brings about rougher surface irregularities on the surface of a wafer is eliminated by the use of the step of slight polishing on the back surface after the etching step and the inherent advantage stands without a loss, so that particle generation from the back surface of a semiconductor wafer in handling is much reduced and what's more a flatter semiconductor wafer is realized and a yield of an electronic device fabrication grows the higher.