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发明名称
OVERERASE CORRECTION FOR FLASH MEMORY WHICH LIMITS OVERERASE AND PREVENTS ERASE VERIFY ERRORS
摘要
An integrated circuit including an array of flash EEPROM memory cells wherein overerase correction is provided after application of each erase pulse.
申请公布号
WO9715928(A1)
申请公布日期
1997.05.01
申请号
WO1996US10720
申请日期
1996.06.21
申请人
ADVANCED MICRO DEVICES, INC.
发明人
CLEVELAND, LEE;CHANG, CHUNG, K.;TANG, YUAN;LEONG, NANCY;FLIESLER, MICHAEL;KUO, TIAO-HUA
分类号
G11C16/34;(IPC1-7):G11C16/06
主分类号
G11C16/34
代理机构
代理人
主权项
地址
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