发明名称 |
Low temperature formation of palladium silicided shallow junctions using implant through metal/silicide technology |
摘要 |
A low temperature process for forming palladium silicided shallow junctions in which ions are implanted into a palladium or a palladium silicide layer over a silicon substrate. The impurities are driven into the silicon substrate during the formation or recrystallization of the palladium silicide layer, and a diffusion region with shallow junction is formed in the substrate.
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申请公布号 |
US5624867(A) |
申请公布日期 |
1997.04.29 |
申请号 |
US19950448670 |
申请日期 |
1995.05.24 |
申请人 |
NATIONAL SCIENCE COUNCIL |
发明人 |
CHENG, HUANG-CHUNG;LIN, CHENG-TUNG;CHOU, PEI-FEN |
分类号 |
H01L21/225;(IPC1-7):H01L21/225;H01L21/283 |
主分类号 |
H01L21/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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