| 摘要 |
A manufacturing method of TFT is provided to simplify the method using N2 and/or PH3 plasma treatments. On a insulating substrate(1) having a gate electrode(2) and a gate insulator(3), a source electrode(7), a drain electrode(8) and a pixel electrode(6) are simultaneous formed. A first plasma process using PH3 gas is performed, thereby forming a P-doping layer(9) only on the surface of the source, drain and pixel electrodes(7)(8)(6). Then a second plasma treatment using N2 gas is performed, thereby forming a N-doping layer(10) only on the surface of the gate insulator(3). a-Si:H layer(4) is deposited on the P-doping and N-doping layers(9)(10), thereby forming an active layer(9') of n+ a-Si:H on the P-doping layer(9) and forming a SiN insulator(10') on the N-doping layer(10).
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