Halbleiterbauelement mit einer Aluminium-Zwischenschaltung und Verfahren zu dessen Herstellung

摘要

A semiconductor device and a method of manufacturing the same are provided which comprises a metal interconnection consisting of a titanium-aluminum film with (111) orientation formed on a semiconductor substrate via an insulating film, and an aluminum film or an aluminum alloy film with (111) orientation formed on the titanium-aluminum film by virtue of epitaxial growth. With such structure, electromigration endurance of an aluminum interconnection is improved and a wiring structure of a semiconductor is achieved with high reliability.