Apparatus and method for fabricating metal paths in semiconductor substrates through high pressure extrusion

摘要

A high pressure metallization apparatus (10) provides a chamber for enclosing or enveloping a substrate (30) in a high pressure environment, and thereby extrude a film layer into any voids in the covers holes or trenches thereon. The high pressure is maintained in a pressure chamber (22), which is substantially enclosed within a vacuum chamber (20). The apparatus (10) includes a positioning member which relatively rigidly positions the pressure chamber plugs (46, 64) during high pressure operations, and also allows separation of the plugs (46, 64) to enable pressure chamber access. The apparatus (10) is configured for relatively rapid access to the internal components thereof, for rapid service and cleaning turnaround. Additionally, the chamber (22) is configured to have minimal relative movement between the structural elements thereof, to reduce particle generation in the apparatus.