发明名称 |
MANUFACTURE OF HALFTONE PHASE INVERSION MASK |
摘要 |
PROBLEM TO BE SOLVED: To facilitate the addition of chrome border function as well as enhance the ratio of yield and reliability. SOLUTION: This method comprises the steps of: forming a shifter 13(33) on the whole surface of a transparent substrate; forming a light shielding film 15(35) on the whole surface of the shifter 13(33); forming a photoregister 17(37) on the whole surface of a light shielding film 15(35); forming a photoregistration pattern 17a(37a) by patterning photoregistration to thereby expose the light shielding film; forming a light shielding pattern 15a(35a) by etching the light shielding film exposed by using the registration pattern as the etching mask to thereby expose the shifter; removing the photregistration pattern and performing cleaning; forming a shifter pattern by etching the exposed shifter by using the light shielding film pattern as the etching mask; and removing the light shielding pattern. Accordingly no defect is generated in a phase inverted mask. |
申请公布号 |
JPH09106064(A) |
申请公布日期 |
1997.04.22 |
申请号 |
JP19960236415 |
申请日期 |
1996.09.06 |
申请人 |
SAMSUNG ELECTRON CO LTD |
发明人 |
BUN SEIYOU;KATSURA SOUIKU;KIN SEIKI;HAYASHI SEISHIYUTSU;SHIN JINKIN |
分类号 |
G03F1/32;G03F1/68;G03F1/80;H01L21/027 |
主分类号 |
G03F1/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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