发明名称 PROCESS FOR THE PREPARATION OF SINTERED BODY OF SILICON NITRIDE
摘要 After molded body is made by adding a sintering adjuvant 4-10wt.% into Si3N4 powder, it is sintered primarily at 1600-1800 deg.C under 2-5 atm. nitrogen gas for 10-30 min to have a sintering density of 95% and sintered secondarily under 50-100 atm. nitrogen gas pressure for 0.5-4 hours to have at least 95% density to give a high abrasion resistant Si3N4 sintered body. The used sintering adjuvant consists of AlN 2-7wt.%, Y2O3 2-5wt.% and MgO's ratio is less than 1wt.%.
申请公布号 KR970005889(B1) 申请公布日期 1997.04.21
申请号 KR19940026955 申请日期 1994.10.21
申请人 POSCO;RIST 发明人 JANG, CHOL-WOO;LEE, KANG-HO;KIM, DO-HYUNG
分类号 C04B35/584;(IPC1-7):C04B35/584 主分类号 C04B35/584
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