发明名称 |
PROCESS FOR THE PREPARATION OF SINTERED BODY OF SILICON NITRIDE |
摘要 |
After molded body is made by adding a sintering adjuvant 4-10wt.% into Si3N4 powder, it is sintered primarily at 1600-1800 deg.C under 2-5 atm. nitrogen gas for 10-30 min to have a sintering density of 95% and sintered secondarily under 50-100 atm. nitrogen gas pressure for 0.5-4 hours to have at least 95% density to give a high abrasion resistant Si3N4 sintered body. The used sintering adjuvant consists of AlN 2-7wt.%, Y2O3 2-5wt.% and MgO's ratio is less than 1wt.%.
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申请公布号 |
KR970005889(B1) |
申请公布日期 |
1997.04.21 |
申请号 |
KR19940026955 |
申请日期 |
1994.10.21 |
申请人 |
POSCO;RIST |
发明人 |
JANG, CHOL-WOO;LEE, KANG-HO;KIM, DO-HYUNG |
分类号 |
C04B35/584;(IPC1-7):C04B35/584 |
主分类号 |
C04B35/584 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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