发明名称 |
Graded-channel semiconductor device and method of manufacturing the same |
摘要 |
<p>A graded-channel semiconductor device (10) includes a substrate region (11) having a major surface (12). A source region (13) and a drain region (14) are formed in the substrate region (11) and are spaced apart to form a channel region (16). A doped region (18) is formed in the channel region (16) and is spaced apart from the source region (13), the drain region (14), and the major surface (12). The doped region (18) has the same conductivity type as the channel region (16), but has a higher dopant concentration. The device (10) exhibits an enhanced punch-through resistance and improved performance compared to prior art short channel structures. <IMAGE></p> |
申请公布号 |
EP0768715(A2) |
申请公布日期 |
1997.04.16 |
申请号 |
EP19960115902 |
申请日期 |
1996.10.04 |
申请人 |
MOTOROLA INC. |
发明人 |
DAVIES, ROBERT B.;BAKER, FRANK K.;CANDELARIA, JON J.;WILD, ANDREAS A.;ZDEBEL, PETER J. |
分类号 |
H01L21/336;H01L29/10;H01L29/78;(IPC1-7):H01L29/10 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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