Method of manufacturing semiconductor device using a hagolen plasma treatment step

摘要

A method of manufacturing a semiconductor device comprising the steps of forming an insulating layer on a first conductive layer deposited on a semiconductor substrate, treating the surface of the insulating layer and the exposed surface of the first conductive layer with a gas plasma containing halogen atoms, and depositing selectively a conductive material by vapor growth on the exposed surface of the first conductive layer so as to form a second conductive layer. The gas plasma containing halogen atoms can be formed by introducing a gas containing halogen atoms into the treatment chamber housing the sample, and applying high frequency power. The gas plasma containing halogen atoms can be formed by introducing a gas containing halogen atoms into the treatment chamber to adsorb the halogen atoms on the inner wall of the chamber, and applying high frequency power. Alternatively, the gas plasma can be formed by applying high frequency power after placing the sample and a halogen containing material inside the chamber. By treatment with the gas plasma containing halogen atoms, a second conductive layer can be deposited with good selectivity.