发明名称 MARK DETECTION METHOD, POSITIONING METHOD USING IT, EXPOSURE METHOD AND DEVICE AND DEVICE PRODUCTION
摘要 <p>PROBLEM TO BE SOLVED: To always detect a mark position accurately aiming highly accurate mark detection using electron beam is by setting an acceleration voltage of electron beam according to a layer structure of a substrate when detecting a mark on a substrate by using electron beam. SOLUTION: An alignment mark 31 is formed on a processed wafer 6, the alignment mark 31 and the wafer 6 are covered with an SiO2 layer 32 thereon and a resist layer 33 is further formed thereon. Electron beam 11 is cast on the wafer 6 while deflecting and scanning in an arrow direction. Fluorescent X-ray 34 is generated by the casting and the fluorescent X-ray 34 is detected by a detector 36. Thereby, a position of the alignment mark 31 on the wafer 6 is specified and an acceleration voltage of the electron beam 11 is set. Thereby, an accurate mark position can be always detected aiming at highly accurate mark detection using the electron beam 11.</p>
申请公布号 JPH09102452(A) 申请公布日期 1997.04.15
申请号 JP19950260092 申请日期 1995.10.06
申请人 CANON INC 发明人 AMAMIYA MITSUAKI;TSUKAMOTO MASAMI
分类号 G01B15/00;G03F7/20;G03F9/00;H01J37/304;H01L21/027;H01L21/68;(IPC1-7):H01L21/027 主分类号 G01B15/00
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