| 摘要 |
PROBLEM TO BE SOLVED: To improve productivity by positively eliminating particles in a semiconductor substrate treating device. SOLUTION: In a substrate treating device with a substrate treatment room which can be divided into single rooms, a substrate treatment room 14 has a flow-in port 141a of inactive gas for eliminating particles and an exhaust port 144b and a pressure controller 21-3 for controlling the pressure in the treatment room between the exhaust port 144b and an exhaust device connected to the exhaust port and the pressure controller 21-3 maintains the flow of the inactive gas at a time zone excluding a required substrate treatment process in the substrate treatment room. |
