| 摘要 |
A method for making a field-emission type electron gun has the steps of: a) forming insulating film on a main plane of a silicon substrate; b) selectively etching the insulating film within a region where a gate electrode will be formed to form a mask of the insulating film; c) removing the silicon substrate within the region with using the mask to form a concave portion, wherein the insulating film leaves on an edge of the concave portion and an edge of the insulating film extends in the form of a cantilever from the edge of the concave portion; d) oxidizing a surface of the silicon substrate by thermal oxidation to form an emitter with a sharpened tip; e) depositing film for forming a gate electrode to fill the concave portion; f) removing an unnecessary part of the film for forming the gate electrode; and g) selectively removing the oxidized surface of the silicon substrate on the emitter to expose the tip of the emitter.
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