| 发明名称 |
Method of preventing deterioration of film quality of transparent conductive film |
| 摘要 |
A method of manufacturing a semiconductor device according to the present invention comprises the steps of forming a conductive film on an insulating film, forming growth nucleuses containing any of elements in group IIIb, group IVb, group Vb and group VIIb that does not constitute the conductive film and the insulating film on the surface of the conductive film, and growing a semiconductor selectively on growth nucleuses. |
| 申请公布号 |
US5620924(A) |
申请公布日期 |
1997.04.15 |
| 申请号 |
US19950407957 |
申请日期 |
1995.03.22 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
TAKIZAWA, YUTAKA;YANAI, KEN-ICHI |
| 分类号 |
H01L29/40;G02F1/1362;H01L21/20;H01L21/205;H01L21/336;H01L29/78;H01L29/786;H01L31/04;H01L31/18;(IPC1-7):G02F1/13 |
主分类号 |
H01L29/40 |
| 代理机构 |
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代理人 |
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| 地址 |
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