HALBLEITERSPEICHER MIT EINEM FERROELEKTRISCHEN KONDENSATOR UND EINER SCHUTZSCHICHT AUS TiON
摘要
A semiconductor device having a ferroelectric or polycrystalline silicon gate, wherein a humidity-resistant hydrogen-barrier film such as a TiN film or a TiON film is formed on the ferroelectric or polycrystalline silicon gate by the film-forming method which does not release hydrogen. <IMAGE>
申请公布号
DE69124994(D1)
申请公布日期
1997.04.10
申请号
DE1991624994
申请日期
1991.08.20
申请人
RAMTRON INTERNATIONAL CORP., COLORADO SPRINGS, COL., US
