The sputtering arrangement incorporates a rotationally symmetric magnetron sputter source (1) and a holding arrangement (10, 11) for a disk-shaped workpiece (9). The source (1) has at least two ring-shaped electron traps respectively with radii (R1, R2) in the sputtering source plane (6, 7) which is at a distance (d) from the workpiece. The ratio (R2-R1)/d lies between 0.8 and 3.0.
申请公布号
DE19639240(A1)
申请公布日期
1997.04.10
申请号
DE19961039240
申请日期
1996.09.24
申请人
BALZERS AG, BALZERS, LI
发明人
GRUENENFELDER, PIUS, WANGS, CH;HIRSCHER, HANS, BAD RAGAZ, CH;HAAG, WALTER, GRABS, CH;ALBERTIN, WALTER, BAD RAGAZ, CH
