发明名称 |
Interpoly dielectric structure in EEPROM device |
摘要 |
A dielectric insulating composite for insulating a floating gate from a control gate in a nonvolatile memory cell such as EPROM, EEPROM and flash EPROM cells is provided which includes a bottom layer of silicon dioxide formed on the floating gate, a layer of silicon nitride formed on the bottom silicon dioxide layer and a top silicon dioxide layer formed on the nitride layer where the silicon nitride layer has a thickness in the resulting composite which is less than the bottom and top silicon dioxide layers. In one embodiment, the nonvolatile memory cell includes a first conductivity-type semiconductor substrate, source and drain regions formed on a surface of the substrate, an insulating layer thermally grown on top of the source and drain regions, a floating gate positioned on the insulating layer for insulating the floating gate from the source and drain regions, the dielectric insulating composite being positioned between the floating gate and a control gate.
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申请公布号 |
US5619052(A) |
申请公布日期 |
1997.04.08 |
申请号 |
US19940315209 |
申请日期 |
1994.09.29 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
CHANG, CHANG Y.;SHONE, FUCHIA;HUANG, CHIN-YI;PENG, NAI C. |
分类号 |
H01L21/28;H01L29/51;(IPC1-7):H01L29/788 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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