| 摘要 |
A semiconductor device having a semiconductor region including a material of a first predetermined conductivity type; an insulating layer (40) provided on the semiconductor region; a gate electrode (32, 34, 38) provided on the insulating layer, the gate electrode forming a potential well within the semiconductor region in response to a potential being applied thereto; and a diffusion (36) of highly doped material of a second predetermined conductivity type being positioned within the semiconductor region, and which is applied through an opening in the gate electrode and the insulating layer (40), the diffusion (36) being in direct ohmic contact with the potential well. The diffusion (36) can be either a n+ or p+ diffusion. The diffusion (36) accommodates a reduction in lateral time constants of charge redistribution within the potential well, direct sensing of the charge in the well, and injection and extraction of charge to and from the well.
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