| 摘要 |
In a semiconductor device, such as a memory cell, including a capacitor, a corrugated electrode (42) is used as a lower electrode of the capacitor and is covered with an insulation film (43) to be opposed to an upper electrode (26). The corrugated electrode is specified in section by a series of folded portions which are alternately folded vertically and horizontally. Practically, the corrugated electrode is formed by a corrugated wall which surrounds a hollow space and which has a rectangular or a polygonal shape on a plane. Alternatively, the corrugated wall has an irregular surface formed by an aggregation of grains so as to effectively widen a surface of the lower electrode. Such a corrugated electrode may be manufactured by a mold which is formed by selectively etching a stack of first-kind spacer films (46) and second-kind spacer films (47). <IMAGE> |
