发明名称 Method for making or treating a semiconductor
摘要 A method for making a semiconductor, without using a vacuum pump or vacuum chamber, using corona discharge, which comprises the steps or: supplying a reactive gas to, at least, one electrode capable of generating corona discharge above a substrate with an RF power source under the atmosphere; irradiating ions or radicals resulted from the decomposition of said reactive gas by said corona discharge to said substrate; allowing said ions or radicals to be chemically reacted with said substrate or be diffused in said substrate.
申请公布号 GB2272995(B) 申请公布日期 1997.04.02
申请号 GB19930022966 申请日期 1993.11.08
申请人 * GOLDSTAR CO LTD;* LG ELECTRONICS INC 发明人 BYUNG CHUL * AHN
分类号 H01L21/205;C23C16/06;C23C16/24;C23C16/34;C23C16/40;C23C16/44;C23C16/455;C23C16/505;C23C16/509;H01L21/203;H01L21/223;H01L21/265;H01L21/285;H01L21/30;H01L21/306;H01L21/3065;H01L21/31;H01L21/311;H01L21/316;H01L21/318;(IPC1-7):H01L21/02;H01L21/263;H01L21/302 主分类号 H01L21/205
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