发明名称 |
METHOD OF FORMING MICROPATTERNS |
摘要 |
The surface of a semiconductor substrate is coated with a chemical amplification resist composed of a radiosensitive material containing, as its main component, a polymer or monomolecular compound in which at least a part of phenol hydroxyl groups are substituted by protecting groups that are easily eliminated by the action of an acid. Next, said chemical amplification resist is exposed to light or irradiated with a radioactive ray and then developed, thereby forming a resist pattern. Next, the entire surface of said resist pattern is irradiated with a radioactive ray, while maintaining the temperature of the semiconductor substrate in the range not higher than the glass transition point of said chemical amplification resist, so as to eliminate the protecting groups contained in said chemical amplification resist, thereby improving the heat resistance of said resist pattern. <IMAGE> |
申请公布号 |
EP0595361(A3) |
申请公布日期 |
1997.04.02 |
申请号 |
EP19930117627 |
申请日期 |
1993.10.29 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD;WAKO PURE CHEMICAL INDUSTRIES LTD |
发明人 |
KATSUYAMA, AKIKO;ENDO, MASAYUKI;SASAGO, MASARU;URANO, FUMIYOSHI;FUJIE, HIROTOSHI |
分类号 |
G03F7/004;G03F7/40 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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