| 摘要 |
A method and apparatus for depositing material to conformally cover or fill holes within the surface of a semiconductor substrate (18). The preferred method includes the steps of coherently depositing a first thickness of the material onto the surface of the substrate (18); reverse sputtering the deposited material so as to coat the sidewalls of the contact holes with the deposited material; after the first thickness of the material is deposited onto the surface of the substrate (18); and while depositing the second thickness of the material onto the surface of the substrate (18), heating the substrate (18) to enhance reflow of the material being deposited. <IMAGE> |
