| 摘要 |
A method for forming an interlayer insulating film of a semiconductor device is capable of avoiding a field inversion phenomenon between the drain and source 113 of a parasitic MOSFET. The method includes the steps of preparing a semiconductor substrate 101 having an under-layer metal wiring 117 formed on an upper surface thereof, forming a barrier layer 121 on an exposed surface of the semiconductor substrate, coating a spin-on-glass film 123 over the barrier layer and then baking the spin-on-glass film, and forming an insulating film 125 over the spin-on-glass film. The device so formed also includes a second wiring layer 127, a BPSG film 115 and a protective nitride layer 129. |
