发明名称 |
Circuit substrate including insulating layer of aluminum nitride and electrically conductive layer of conductive component, aluminum nitride and other components, and semiconductor device containing same |
摘要 |
Disclosed is a circuit substrate and a semiconductor device to which the circuit substrate is applied. The circuit substrate has an insulating layer and an electrically conductive layer. The insulating layer is composed of a sintered aluminum nitride composition containing: aluminum nitride; a first component given by a compound containing an element which is selected from the group consisting of group IIa elements and group IIIa elements of the periodic table; a second component given by either a simple boron or a boron compound; and a third component give by either a simple manganese or a manganese compound. The electrically conductive layer contains: a conductive component given by a metal or an electrically conductive compound for exhibiting electric conductivity; aluminum nitride; the first component; the second component; and the third component. The semiconductor device has the above circuit substrate, a semiconductor element mounted on the circuit substrate, and a cap being tightly bonded to the circuit substrate with a sealing glass to cover the semiconductor element.
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申请公布号 |
US5616956(A) |
申请公布日期 |
1997.04.01 |
申请号 |
US19950524906 |
申请日期 |
1995.09.07 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
HORIGUCHI, AKIHIRO;MONMA, JUN;KIMURA, KAZUO;OH-ISHI, KATSUYOSHI;UENO, FUMIO;KASORI, MITSUO;SUMINO, HIROYASU |
分类号 |
H05K1/09;C04B35/581;C04B41/87;C04B41/88;C04B41/89;H01L25/16;H05K1/03;H05K3/46;(IPC1-7):H01L23/02;H01L23/48;H01L29/62;C04B35/58 |
主分类号 |
H05K1/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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