| 摘要 |
In a Group II-VI semiconductor laser based on MgZnSSe, CdZnSSe, and MgCdZnSSe, adsorption layers containing crystal structure elements and doping impurities are successively grown as crystals on an n-type substrate, wherein the layers from the initial adsorption layer to the next-to-last p-type adsorption layer are formed using solid-source MBE, and the last p-type adsorption layer is formed using gas-source MBE or MOVPE; and wherein the last p-type adsorption layer is preferably grown under Group II rich conditions.
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