| 摘要 |
PROBLEM TO BE SOLVED: To protect a compound semiconductor crystal against damage by employing a multilayer, comprising two or more metal layers, for at least one electrode and forming the metal layer at a part abutting on the compound semiconductor crystal by vacuum deposition. SOLUTION: An Au electrode 22 is formed on one side of a CdTe crystal 23 and a multilayer metal electrode 21, comprising an Au layer 211, a Cu layer 212 and an Ni layer 213 sequentially from the surface of crystal, is formed on the opposite side by vacuum deposition. A protective layer 24 is then formed entirely except the central part of electrode 21 but including the part where the CdTe crystal is exposed. Finally, a solder bump 26 is formed in the center of electrode 21 where the protective film 24 is opened through a barrier metal 25. Since the lowermost layer 211 for forming the electrode 21 is formed by vacuum depositing a metal exhibiting high adhesion to the compound semiconductor crystal, the crystal is not damaged.
|
