| 摘要 |
PROBLEM TO BE SOLVED: To prevent the generation of separation of a photoresist and a conductive film when a dot pattern is formed by a method wherein the upper end part of the first through hole, to be formed on the first interlayer insulating film, is projected from the first interlayer insulating film, and the height of the upper end part of the through hole is formed equal to the height of the upper surface of the second layer wiring. SOLUTION: The first interlayer insulating film 3 is formed in the thickness which is thicker than the intrinsic thickness and corresponding to the thickness of the second layer wiring 5. An aperture is formed on the first interlayer insulating film 3, and the first through hole 4 is formed by filling up the tungsten of conductive material. The first interlayer insulating film 3 is etched in the thickness corresponding to the film thickness of the second layer wiring 5, and the upper end part of the first through hole 4 is projected from the first interlayer insulating film 3. As a result, the height of the upper end part of the first through hole 4 can be made equal to the height of the upper surface of the second layer wiring 5, and a laminated through hole, for which a dot pattern is unnecessary, can be formed. |
