| 摘要 |
PROBLEM TO BE SOLVED: To form bumps of uniform height on each electrode by respectively choosing the size of each opening for a used mask so that the volume of a metal material deposited inside the respective openings is kept constant. SOLUTION: The size of the openings 10A, 11A of a metal mask 10 or a resist layer 11 is chosen so that the volume of each bump metal layer 12 is kept constant. For that reason, the bump metal material of a fixed quantity can be supplied onto each electrode of each semiconductor IC and its periphery. Accordingly, by using this method, the bump 13 of uniform height can be formed on the respective electrodes 14 of each semiconductor IC formed in a wafer 1 to a degree that the volume of the respective bumps can be kept constant. Therefore, a semiconductor device in which the bump 13 of uniform height is accurately formed can be obtained. Further, since the size of a wafer is not restricted, this method can be applied even to the electrode of a semiconductor device formed in a wafer of not less than 6 inches. |
