发明名称 |
METHOD FOR MANUFACTURE FOR LIGHT SWITCHING OF SEMICONDUCTOR |
摘要 |
The present invention provides a method of making a self-aligned semiconductor optical switch using variation of refractivity of optical waveguide by current application. This method includes the steps of: forming on a substrate (1) a light waveguide layer (2), an n-type InP clad layer (3), a p-type InP blocking layer (4) for blocking current, and an n-type InGaAs cap layer (5); selectively etching the cap layer (5) forming a reflecting surface to be in a groove shape and diffusing Zn all over the surface; depositing a p-type electrode (6) on the cap layer (5); and etching the cap layer (5), the p-type InP blocking layer (4), the clad layer (3), and depositing an n-type electrode (7) under the substrate (1). |
申请公布号 |
KR970004488(B1) |
申请公布日期 |
1997.03.28 |
申请号 |
KR19930018145 |
申请日期 |
1993.09.09 |
申请人 |
KOREA ELECTRONICS & TELECOMMUNICATIONS RESEARCH INSTITUTE;KOREA TELECOM CORP. |
发明人 |
OH, KWANG-RYONG;PARK, KI-SUNG;PARK, JONG-DAE;KIM, HONG-MAN |
分类号 |
H01L29/86;H01L29/8605;(IPC1-7):H01L31/072 |
主分类号 |
H01L29/86 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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