发明名称 |
Gallium phosphate light emitting diode with zinc-doped contact |
摘要 |
A light emitting diode includes a doped semiconductor substrate wafer with a layer sequence suitable for light emission in the green spectral range epitaxially applied thereon. A zinc-doped contact is applied to the p-conductive side of the wafer for efficient generation of pure green light emissions. An electrically conductive layer is provided between the zinc-doped contact and the p-conductive wafer side to suppress diffusion of oxygen into the p-conductive wafer side during diode manufacture.
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申请公布号 |
US5614736(A) |
申请公布日期 |
1997.03.25 |
申请号 |
US19950533053 |
申请日期 |
1995.09.25 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
NEUMANN, GERALD;NIRSCHL, ERNST;SPAETH, WERNER |
分类号 |
H01L33/30;H01L33/38;H01L33/40;(IPC1-7):H01L33/00;H01L23/48;H01L29/46 |
主分类号 |
H01L33/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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