| 摘要 |
<p>1,071,137. Semi-conductor devices. SIEMENS A.G. Oct. 9, 1964 [Oct. 10, 1963], No. 41216/64. Heading H1K. [Also in Division G1] The breakdown of a switching diode having at least four zones of alternately opposite conductivity type is controlled by radiation emitted from a laser diode or other photo-emissive diode mounted in association with the switching diode. The diodes may be distinct devices mounted in a common housing or they may be combined in a single semi-conductor body (the component parts of which need not be of the same semi-conductor material). In one embodiment, a PNPN rectifier diode and a PN photoemissive diode are mounted in a sealed metal housing consisting of a cover and base plate. The two diodes are mounted at the foci of an incomplete ellipse a portion of which is formed by a radiation reflecting part of the inside of the cover and a portion of which is formed on the inside of the base-plate. This arrangement ensures that the radiation from the emissive diode reaches the rectifying diode. In a second embodiment the two diodes are provided in a single body as shown in Fig. 2. The P-type zone of an annular emissive diode pE, nE (which may be a laser diode) is isolated by an N-type region from the P-type terminal region pS2 of the PNPN rectifier. The radiation-receiving junction of the rectifier is constructed to be in the same plane as the photo-emissive junction and may be a hetero-junction for efficient radiation absorption. Any suitable materials may be used for the diodes providing that the emissive diode produces radiation to which the rectifying diode is sensitive. Materials suggested are germanium, silicon, gallium arsenide, gallium phosphide, and mixed crystals of gallium arsenide and phosphide.</p> |
