| 摘要 |
<p>PROBLEM TO BE SOLVED: To achieve miniaturization and the facilitation of manufacture by realizing a pressure-contact-force-generating mechanism required for a semiconductor device for large electric power with simple structure and in addition, achieve the structure capable of responding to the constitution of a plurality of semiconductor elements, and to enhance the uniformity of a contact electric resistance and a contact thermal resistance. SOLUTION: In a semiconductor device having the structure in which a semiconductor element base body 1 is held in its central part and press-contacted through a pair of electrode base bodies 3, 4, the semiconductor element base body 1 is press-contacted by utilizing the hardening shrinkage force or thermal shrinkage force of an external resin member 13 formed outside the electrode base bodies 3, 4. Since the semiconductor device has the constitution in which the semiconductor element base body 1 and the electrode base bodies 3, 4 are press-contacted by molding the external resin member 13, the characteristic of sail and uniform contact electric resistance and contact thermal resistance can be easily obtained even in a plurality of parallel connection structures without being limited to the device of a single semiconductor element.</p> |
