| 摘要 |
<p>PROBLEM TO BE SOLVED: To stick no deposition on an electrostatic chuck, when removing the remaining charge of the electrostatic chuck therefrom. SOLUTION: After applying respectively high- and low-frequency voltages to an upper electrode 51 and susceptor 6 to perform a predetermined processing to a wafer (W) on an electrostatic chuck 11 and carry out it from a processing chamber 2, an inert gas is introduced into the processing chamber 2 and the gap between the upper electrode 51 and susceptor 6 is made wider than the one in case of processing the wafer W. Thereby, when a high-frequency power with a smaller power value than the one in case of processing the wafer W is fed only to the upper electrode 51, a plasma with no applied self-bias is generated to remove a remaining charge on the electrostatic chuck 11 therefrom. At this time, since the condition of this plasma is different from the one in case of processing the wafer W, no deposition is stuck on the electrostatic chuck 11.</p> |
