SEMICONDUCTOR DEVICE AND MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To suppress diffusion of dopant contained in a silicon film, and improve element characteristics, by installing a gate electrode formed by laminating a non-single crystal silicon film containing dopant, a titanium silicide film of C49 or C54 structure, and a metal sliced film. SOLUTION: A silicon film 6, a titanium silicide film 48, and a tungsten silicide film 8 are laminated in order, and form a gate electrode 32. The silicon film 6 is composed of non-single crystal containing the dopant for determining the conductivity type. The titanium silicide film 48 is constituted of C49 or C54 structure. The dopant in the non-single crystal silicon film 6 is prevented from diffusing into the tungsten silicide film 8 by the titanium silicide film 48 of C49 or C54 structure. Thereby the increase of resistance of the non-single crystal silicon film 6 which is to be caused by the decrease of dopant concentration in the non-single crystal silicon film 6 is restrained, so that a device provided with a gate electrode 32 having a desired resistance value can be obtained.