| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device wherein storage capacity is large and high speed operation is enabled. SOLUTION: A DRAM is provided with a semiconductor substrate 10 and unit blocks U1-U4. The respective unit blocks contain peripheral circuits 11, 12, 13 or 14 and eight memory blocks B11-B18, B21-B28, B31-B38 or B41-B48 which are arranged surrounding the peripheral circuits. |
