| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device wherein the junction leakage current from a conducting layer to a semiconductor board is restrained and an electric field in the vicinity just below a gate electrode is relieved. SOLUTION: An n<+> impurity diffusion layer 191 and an n<++> impurity diffusion layer 190 which are electrically connected through a pillar-shaped conducting layer 155a and a contact part 200 are arranged. The lengthes L4, L5, L6 of the respective impurity diffusion layers on the surface of a semiconductor substrate 150 are almost equal. The pillar-shaped conducting layer 155a is put close to a gate electrode 154 at a distance L7 which is almost equal to the distance L2 from the surface of the semiconductor substrate 150 to the upper surface of the gate electrode 154. Thereby, the junction leakage current is restrained, and an electric field in the vicinity just below the gate electrode is relieved. |
