| 摘要 |
<p>PROBLEM TO BE SOLVED: To form a mask pattern of a halftone phase shift mask with high accuracy without changing dimensions even when the film thickness of a photosensitive material is not uniform by applying a photosensitive material layer on a transparent substrate and irradiating the photosensitive material layer through the transparent substrate for exposure. SOLUTION: After a halftone film 2 is deposited on a transparent substrate 1, a photosensitive material layer 3 is applied and is exposed to light by irradiation of light 4 through the transparent substrate 1. By irradiating the photosensitive material layer with light 4 through the transparent substrate 1, 80-90% of the light 4 is absorbed by the halftone film 2 and the rest 10-20% of the light transmitted is used as the primary light 5 to expose the photosensitive material layer 3. However, since no reflecting member is present, the light incident on the photosensitive layer 3 are not reflected. Thus, secondary light by reflection, namely, reflected light 6 is not produced, which suppresses changes in the dimension.</p> |
