发明名称 |
Method of programming a flash EEPROM memory cell optimized for low power consumption and a method for erasing said cell |
摘要 |
<p>Fast 5V-only programming of a Flash EEPROM cell or array of such cells is disclosed. Use is made of an enhanced source-side injection mechanism. This concept requires a program gate in the field oxide region which serves to capacitively couple a high voltage to the floating gates. Thus a very high injection current is established during programming. This additional program gate, however, increases the cell area considerably. The present disclosure shows a contactless 5V-only Flash EEPROM array configuration that relies on shared program lines in order to minimize the area overhead that is caused by this program gate. Furthermore, a memory array with shared wordlines is presented which further enhances the density achievable. <IMAGE></p> |
申请公布号 |
EP0762429(A2) |
申请公布日期 |
1997.03.12 |
申请号 |
EP19960870103 |
申请日期 |
1996.08.07 |
申请人 |
INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM VZW |
发明人 |
VAN HOUDT, JAN;HASPESLAGH, LUC;DEFERM, LUDO;GROESENEKEN, GUIDO;MAES, HERMAN |
分类号 |
G11C16/04;G11C5/14;G11C11/34;G11C16/10;G11C16/16;H01L27/115;(IPC1-7):G11C16/06 |
主分类号 |
G11C16/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|