发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To remarkably reduce power consumed because of a junction capacity of a sub-word driver in a hierarchical word line structure. SOLUTION: A driving driver is separately installed in each of array controls ACTRL0-ACTRL7 controlling a main word driver MWD and sense amplifier banks SA0-SA8 to generate a driving signal for a sub-word driver SWD. The driving signal is supplied only to the sub-word driver SWD of any of the activated memory mats MMAT0-MMAT7. A junction capacity of the sub-word driver SWD is reduced, whereby the consumed power is decreased. |
申请公布号 |
JPH0969287(A) |
申请公布日期 |
1997.03.11 |
申请号 |
JP19950222427 |
申请日期 |
1995.08.31 |
申请人 |
HITACHI LTD;TEXAS INSTR JAPAN LTD |
发明人 |
KUBOTA NORIAKI;ARAI KOJI;SUKEGAWA SHUNICHI;ABE KOICHI |
分类号 |
G11C11/401;G11C11/407;H01L21/8242;H01L27/108 |
主分类号 |
G11C11/401 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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