发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PROBLEM TO BE SOLVED: To remarkably reduce power consumed because of a junction capacity of a sub-word driver in a hierarchical word line structure. SOLUTION: A driving driver is separately installed in each of array controls ACTRL0-ACTRL7 controlling a main word driver MWD and sense amplifier banks SA0-SA8 to generate a driving signal for a sub-word driver SWD. The driving signal is supplied only to the sub-word driver SWD of any of the activated memory mats MMAT0-MMAT7. A junction capacity of the sub-word driver SWD is reduced, whereby the consumed power is decreased.
申请公布号 JPH0969287(A) 申请公布日期 1997.03.11
申请号 JP19950222427 申请日期 1995.08.31
申请人 HITACHI LTD;TEXAS INSTR JAPAN LTD 发明人 KUBOTA NORIAKI;ARAI KOJI;SUKEGAWA SHUNICHI;ABE KOICHI
分类号 G11C11/401;G11C11/407;H01L21/8242;H01L27/108 主分类号 G11C11/401
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