| 摘要 |
A method for producing a semiconductor laser device includes the steps of: forming a reflection protective film on a light-emitting facet of a semiconductor laser device; and removing an unwanted reflection protective film formed on a portion other than the light-emitting facet by an etching technique. Furthermore, an apparatus for producing a semiconductor laser device, includes: a formation section forming a reflection protective film on a light-emitting facet of a semiconductor laser device; an etching section removing an unwanted reflection protective film formed on a portion other than the light-emitting facet by an etching technique; a device inverting section turning the semiconductor laser device upside down; and a device transferring section transferring the semiconductor laser device among the formation section, the etching section, and the device inverting section in a predetermined order. |
