发明名称 |
Method of making back gate contact for silicon on insulator technology |
摘要 |
A process for creating a back gate contact, in an SOI layer, that can easily be incorporated into a MOSFET fabrication recipe, has been developed. The back gate contact consists of a etched trench, lined with insulator, and filled with doped polysilicon. The polysilicon filled trench electrically connects the semiconductor substrate to overlying metal contacts.
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申请公布号 |
US5610083(A) |
申请公布日期 |
1997.03.11 |
申请号 |
US19960650697 |
申请日期 |
1996.05.20 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING PTE LTD |
发明人 |
CHAN, LAP;SUNDARESAN, RAVIS H.;WEI, CHE-CHIA |
分类号 |
H01L27/12;(IPC1-7):H01L21/84 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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